Samsung has started mass production of 16Gbit lpddr5 chips. The company makes the chips using a third-generation 10nm class process using EUV machines. According to Samsung, the memory is 16 percent faster than 12Gbit-lppdr5.
The lpddr5 chips from 16Gbit work at 6.4Gbit / s, where Samsung currently operates 12Gb lpddr5 at 5.5Gbit / s. Samsung uses eight 16Gbit chips for packages of 16GB. Currently, the manufacturer has to use eight 12Gbit chips and four 8Gbit chips to get to 16GB. Moreover, according to the manufacturer, the new memory is thirty percent thinner than its predecessor, with all the advantages for smartphones that entails, such as freeing up more space for other parts.
Samsung makes the 16Gbit chips using a ‘1z process’, or the third generation of its 10nm node. The company uses euv machines for this. For processors, euv has been used for certain chip layers for some time and now that the technology is becoming more mature, manufacturers are also using it for memory production. Euv machines use a wavelength of 13.5 nm for the exposure step, making smaller structures more accurate and faster. It is not known to what extent Samsung uses euv in 1z production. Early this year the company announced euv next year with the fourth 10nm generation fully committed to dram.
|Timeline of Samsung’s dram production for mobile devices|
|Augustus 2012||2GB||30nm-class||4Gbit-lpddr3, 1600Mbit/s|
|April 2013||2GB||20nm-class (2y)||4Gbit-lpddr3, 2133Mbit/s|
|November 2013||3GB||20nm-class (2y)||6Gbit-lpddr3, 2133Mbit/s|
|September 2014||3GB||20nm-class (2z)||6Gbit-lpddr3, 2133Mbit/s|
|December 2014||4GB||20nm-class (2z)||8Gbit-lpddr4, 3200Mbit/s|
|Augustus 2015||6GB||20nm-class (2z)||12Gbit-lpddr4, 4266Mbit/s|
|September 2016||8GB||10nm-class (1x)||16Gbit-lpddr4, 4266Mbit/s|
|July 2018||8GB||10nm-class (1y)||16Gbit-lpddr4x, 4266Mbit/s|
|March 2019||12GB||10nm-class (1y)||16Gbit-lpddr4x, 4266Mbit/s|
|June 2019||6GB||10nm-class (1y)||12Gbit-lpddr5, 5500Mbit/s|
|Augustus 2020||16GB||10nm-class (1z)||16Gbit-lpddr5, 6400Mbit/s|