Samsung announced its development of a new generation of random access memory that will give electronics very fast performance and great data preview capabilities.
And Samsung indicated on its websites that its cooperation with AMD resulted in the production of the first 16 GB DDR5 random access memory chip, developed with 12 nm technology.
According to the company’s experts, the new random access memories will form the basis for the second generation of computing, data centers and modern electronics that rely on artificial intelligence.
The available information indicates that the new memory is distinguished from the current DDR5 memory by approximately 20% less energy consumption, faster handling of Internet data, and will provide speeds of up to 7.2 GB / s, which will allow the processing and downloading of high-resolution videos of large sizes up to 30 GB at a time.
Samsung is supposed to launch these memories in 2023 with a variety of processors and electronic chips developed with 12 nm technology as well.
