Wafer foundry leader TSMC (2330-TW)(TSM-US) Mi Yujie, senior deputy general manager of research and development, said that the shortage of the semiconductor industry will take 2-3 years to be solved after a new fab joins production, and compared with 2 years ago, the current grasp of future demand Much clearer.
Mi Yujie is a general in the field of advanced manufacturing of TSMC. In the latest issue of IEEE Spectrum, a monthly magazine of the International Institute of Electrical and Electronic Engineers (IEEE), he talked about the challenges faced in the semiconductor field. He believes that one of the most important challenges is to determine each selection of technologies that will bring the greatest value to TSMC customers and provide solutions within a predictable timeframe.
Mi Yujie said that this is the case with the upcoming 3nm, which will take over the process technology two and a half years after the launch of 5nm.
Mi Yujie said that the current process technology has been advanced to the atomic scale. In the past, the next-generation process technology could be realized through the micro-modulation process, but now every new generation of process must find new methods in transistor structure, materials, process and tools. .
Mi Yujie pointed out that in the early stage of his semiconductor career, as long as the transistor was miniaturized through a better lithography process, new process technology could be developed, but for now, it is necessary to enter the next generation process More innovation, and finding enough good engineers is another big challenge.
A shortage of semiconductor chips is another problem he has to face. Mi Yujie believes that it will take 2-3 years to solve the industry shortage after the new production capacity of wafer foundry is launched.
Mi Yujie pointed out that the semiconductor industry missed the signal of demand growth, but also learned a lot in this situation, and is investing a lot of money to build new capacity.
Mi Yujie has worked at TSMC for more than 20 years, and has contributed a lot to the development and manufacturing of advanced complementary metal oxide semiconductor (CMOS) technology. He successfully developed 90nm, 40nm and 28nm technologies, and then led the team to develop 16nm, 7nm, 5nm, 3nm and other more advanced process technologies.