36 Gbps GDDR6 and 1,000-layer V-NAND

Samsung Electronics closes the week with a series of adverts very interesting for him memory market. The South Korean giant, at its Tech Day 2022 event, has provided some details of its plans for the development of next-generation solutions.

We start with the world of DRAM. Samsung says its 1b (10nm) process chips are still under development. However, there is an important evolution. This means that mass production could start sometime in 2023.

The South Korean giant is also focused on going to the next level of manufacturing, reaching less than 10nm in the next years. It is a technological challenge that, as he explains, is requiring the use of new patterns, materials and architectures under “High-K” technology.

GDDR7 and 1,000-layer V-NAND

Samsung has also mentioned what are the next DRAM solutions that will hit the market. We have 32 GB DDR5 and 8.5 Gbps LPDDR5X that will be to future computers, data centers, mobile devices and video game consoles.

In addition to announcing the aforementioned novelties related to conventional DRAM memory, Samsung pointed out that it is important to work on custom DRAM solutions, such as HBM-PIM, AXDIMM and CX. The objective of this will be the “explosive growth” of the sector.

One of the most interesting news of Tech Day 2022 has been a look at Samsung’s memory specifications for next-generation graphics. It’s about the DRAM GDDR7a great promise for future video game and graphics consoles.

The manufacturer says GDDR7 will offer speeds up to 36Gbpsan interesting increase if we take into account the 24 Gbps that it reaches GDDR6. This feature could guarantee an important leap in performance for the successors of the RTX 4090but also a jump in its price.

Last but not least, we mention that Samsung is still working on improving its storage technology. The 8th generation V-NAND chips feature a 42% improvement in bit density over the previous generation.

the new chips V-NAND con 1 TB of capacity will hit the market later this year, but that’s not all. Also in development is 9th generation V-NAND, which will start mass production in 2024, so we will have to wait a bit to see it arrive.

The manufacturer says it is also working to get a lot of storage in a small space, as well as improve the speed and efficiency of its future solutions. Following that path, 2030 could stack more than 1,000 layers in its V-NAND memories.

Images: Samsung

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